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Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)
Rajesh Katamreddy, Ronald Inman, Gregory Jursich, Axel Soulet, Alan Nicholls, Christos TakoudisVolume:
515
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2007.02.001
File:
PDF, 713 KB
english, 2007