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GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications
Masataka Higashiwaki, Takashi Mimura, Toshiaki MatsuiVolume:
516
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2007.06.090
File:
PDF, 521 KB
english, 2008