Improvement of brightness with Al2O3 passivation layers on...

Thin Solid Films 2008 Vol. 516; Iss. 8

Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips

Soon-Jin So, Choon-Bae Park
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Volume:
516
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2007.07.143
File:
PDF, 476 KB
english, 2008
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