Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
R. Ghandi, M. Kolahdouz, J. Hållstedt, R. Wise, Hans Wejtmans, H.H. RadamsonVolume:
517
Year:
2008
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2008.08.078
File:
PDF, 175 KB
english, 2008