Formation of GaN nanopillars by selective area growth using...

Journal of Crystal Growth 2002 Vol. 243; Iss. 1

Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

Koji Kawasaki, Ikuo Nakamatsu, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi
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Volume:
243
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(02)01497-5
File:
PDF, 153 KB
english, 2002
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