Self-limiting growth of GaAs with doping by molecular layer...

Journal of Crystal Growth 2002 Vol. 244; Iss. 3-4

Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3

Jun-ichi Nishizawa, Toru Kurabayashi, Piotr Płotka, Hideyuki Kikuchi, Tomoyuki Hamano
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
244
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)01663-9
File:
PDF, 304 KB
english, 2002
Conversion to is in progress
Conversion to is failed