Crystal structure and electrical parameters of In-doped...

Journal of Crystal Growth 2003 Vol. 254; Iss. 1-2

Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique

A.M Samoylov, A.M Khoviv, S.A Buchnev, Yu.V Synorov, E.A Dolgopolova
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Volume:
254
Year:
2003
Language:
english
Pages:
10
DOI:
10.1016/s0022-0248(03)01022-4
File:
PDF, 390 KB
english, 2003
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