Bridgman growth of compositionally graded InxGa1 − xAs (x =...

Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth

Kazuo Nakajima, Toshihiro Kusunoki, Koji Otsubo
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Volume:
173
Year:
1997
Language:
english
Pages:
9
DOI:
10.1016/s0022-0248(96)00803-2
File:
PDF, 527 KB
english, 1997
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