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Formation of an n-GaAsn-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma
Takaki Niwa, Naoki Furuhata, Tadashi MaedaVolume:
175-176
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(96)00960-8
File:
PDF, 538 KB
english, 1997