The formation of 3C-SiC in crystalline Si by carbon implantation at 950°C and annealing — a structural study
N. Frangis, J. Stoemenos, J.Van Landuyt, A. Nejim, P.L.F. HemmentVolume:
181
Year:
1997
Language:
english
Pages:
11
DOI:
10.1016/s0022-0248(97)00278-9
File:
PDF, 1.16 MB
english, 1997