Properties of GaN epilayers with various growth conditions...

Journal of Crystal Growth 1998 Vol. 191; Iss. 1-2

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

Xiaobing Li, Dianzhao Sun, Jianping Zhang, Shirong Zhu, Meiying Kong
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
191
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(98)00029-3
File:
PDF, 94 KB
english, 1998
Conversion to is in progress
Conversion to is failed