CBE growth of carbon doped InGaAs/InP HBTs for...

CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits

J.L Benchimol, J Mba, A.M Duchenois, B Sermage, P Launay, D Caffin, M Meghelli, M Juhel
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Volume:
188
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(98)00094-3
File:
PDF, 190 KB
english, 1998
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