Self-organization of GaN/Al0.18Ga0.82N multi-layer...

Journal of Crystal Growth 1998 / 6 Vol. 189-190

Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

Yoshizawa, Masaki, Kikuchi, Akihiko, Fujita, Nobuhiko, Kushi, Kouichi, Sasamoto, Hajime, Kishino, Katsumi
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Volume:
189-190
Language:
english
Pages:
4
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00188-2
Date:
June, 1998
File:
PDF, 131 KB
english, 1998
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