In situ real-time studies of GaN growth on 6H–SiC(0001) by...

Journal of Crystal Growth 1998 / 6 Vol. 189-190

In situ real-time studies of GaN growth on 6H–SiC(0001) by low-energy electron microscopy (LEEM)

Pavlovska, A, Bauer, E, Torres, V.M, Edwards, J.L, Doak, R.B, Tsong, I.S.T, Ramachandran, V, Feenstra, R.M
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Volume:
189-190
Language:
english
Pages:
7
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00273-5
Date:
June, 1998
File:
PDF, 223 KB
english, 1998
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