1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy
W.-X. Ni, C.-X. Du, K.B. Joelsson, G. Pozina, G.V. HanssonVolume:
80
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0022-2313(98)00117-3
File:
PDF, 140 KB
english, 1998