Device simulation of a n-DMOS cell with trench isolation

Microelectronics Journal 2001 Vol. 32; Iss. 1

Device simulation of a n-DMOS cell with trench isolation

G Kamoulakos, Th Haniotakis, Y Tsiatouhas, J.-P Schoellkopf, A Arapoyanni
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Volume:
32
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2692(00)00108-7
File:
PDF, 864 KB
english, 2001
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