Heavily silicon-doped GaN by MOVPE

Microelectronics Journal 2001 Vol. 32; Iss. 2

Heavily silicon-doped GaN by MOVPE

I Halidou, Z Benzarti, Z Chine, T Boufaden, B El Jani
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Volume:
32
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2692(00)00118-x
File:
PDF, 162 KB
english, 2001
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