The trench Insulated Gate Bipolar Transistor— a high power...

The trench Insulated Gate Bipolar Transistor— a high power switching device

Florin Udrea, Gehan Amaratunga
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Volume:
28
Year:
1997
Language:
english
Pages:
12
DOI:
10.1016/s0026-2692(96)00058-4
File:
PDF, 999 KB
english, 1997
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