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Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors
J.A Chroboczek, G GhibaudoVolume:
40
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0026-2714(00)00059-7
File:
PDF, 288 KB
english, 2000