A complementary molecular-model (including field and...

Microelectronics Reliability 2000 Vol. 40; Iss. 8-10

A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics

J.W. McPherson, R.B. Khamankar, A. Shanware
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Volume:
40
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0026-2714(00)00172-4
File:
PDF, 657 KB
english, 2000
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