Substrate potential shift due to parasitic minority carrier...

Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation

M Schenkel, P Pfäffli, W Wilkening, D Aemmer, W Fichtner
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Volume:
41
Year:
2001
Language:
english
Pages:
8
DOI:
10.1016/s0026-2714(01)00028-2
File:
PDF, 464 KB
english, 2001
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