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Impact of gate oxide nitridation process on 1/f noise in 0.18 μm CMOS
M Da Rold, E Simoen, S Mertens, M Schaekers, G Badenes, S DecoutereVolume:
41
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(01)00098-1
File:
PDF, 287 KB
english, 2001