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In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications
R. Petersen, W. de Ceuninck, L. de Schepper, G. GrégorisVolume:
37
Year:
1997
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(97)00132-7
File:
PDF, 263 KB
english, 1997