Three-dimensional modeling of the heat flow into a GaAs substrate. Influence of thermal phenomena on the RF behavior of power HBTs and technological optimization
P. Souverain, T. Camps, M.S. Faleh, A. Cazarré, J. Tasselli, A. Marty, J.P. BailbéVolume:
38
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(98)00006-7
File:
PDF, 236 KB
english, 1998