![](/img/cover-not-exists.png)
Hf1−xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system
Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa, Asako Hoshino, Shigeki Hiiro, Toshie Suzuki, Hideaki MachidaVolume:
416
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0040-6090(02)00705-8
File:
PDF, 362 KB
english, 2002