Ge-doped SiO2 thin films produced by helicon activated reactive evaporation
W.T Li, D.A.P Bulla, C Charles, R Boswell, J Love, B Luther-DaviesVolume:
419
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0040-6090(02)00711-3
File:
PDF, 396 KB
english, 2002