A new self-consistent model for the analysis of hot-carrier...

Thin Solid Films 2003 Vol. 427; Iss. 1-2

A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

A. Valletta, L. Mariucci, A. Pecora, G. Fortunato, J.R. Ayres, S.D. Brotherton
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Volume:
427
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0040-6090(02)01155-0
File:
PDF, 177 KB
english, 2003
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