Highly conducting doped poly-Si deposited by hot wire CVD...

Thin Solid Films 2003 Vol. 430; Iss. 1-2

Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

Samadhan B. Patil, Anand V. Vairagar, Alka A. Kumbhar, Laxmi K. Sahu, V. Ramgopal Rao, N. Venkatramani, R.O. Dusane, B. Schroeder
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
430
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0040-6090(03)00073-7
File:
PDF, 345 KB
english, 2003
Conversion to is in progress
Conversion to is failed