Concentration and thermal release of hydrogen in amorphous...

Thin Solid Films 1997 Vol. 311; Iss. 1-2

Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering

Y Suzaki, T Shikama, S Yoshioka, K Yoshii, K Yasutake
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Volume:
311
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(97)00371-4
File:
PDF, 228 KB
english, 1997
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