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Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics
Kazuyoshi Torii, Yasuhiro Shimamoto, Shin-ichi Saito, Katsunori Obata, Tsuyoshi Yamauchi, Digh Hisamoto, Takahiro Onai, Masahiko HirataniVolume:
65
Year:
2003
Language:
english
Pages:
7
DOI:
10.1016/s0167-9317(03)00163-1
File:
PDF, 147 KB
english, 2003