Oxygen vacancy defects in tantalum pentoxide: a density...

Microelectronic Engineering 2003 Vol. 69; Iss. 2-4

Oxygen vacancy defects in tantalum pentoxide: a density functional study

R. Ramprasad, Michael Sadd, Doug Roberts, Tom Remmel, Mark Raymond, Eric Luckowski, Sriram Kalpat, Carole Barron, Mel Miller
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Volume:
69
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s0167-9317(03)00296-x
File:
PDF, 202 KB
english, 2003
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