Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2000 Vol. 444; Iss. 3
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Gate-controlled diodes for characterization of the Si–SiO2 interface with respect to surface effects of silicon detectors
C Becker, C Gößling, C Lichau, T Wübben, J Wüstenfeld, R WunstorfVolume:
444
Year:
2000
Language:
english
Pages:
9
DOI:
10.1016/s0168-9002(99)01177-8
File:
PDF, 338 KB
english, 2000