1D electronic properties in temperature-induced c(4×2) to...

Applied Surface Science 2000 Vol. 162-163; Iss. none

1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface

H Enriquez, V Derycke, V.Yu Aristov, P Soukiassian, G Le Lay, L di Cioccio, A Cricenti, C Croti, L Ferrari, P Perfetti
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Volume:
162-163
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(00)00250-6
File:
PDF, 470 KB
english, 2000
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