MOCVD of MgAl2O4 thin films using new single molecular...

Applied Surface Science 2001 / 1 Vol. 169-170

MOCVD of MgAl2O4 thin films using new single molecular precursors: application of β-hydrogen elimination to the growth of heterometallic oxide films

Boo, J.-H., Lee, S.-B., Ku, S.-J., Koh, W., Kim, C., Yu, K.-S., Kim, Y.
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Volume:
169-170
Language:
english
Pages:
6
Journal:
Applied Surface Science
DOI:
10.1016/s0169-4332(00)00710-8
Date:
January, 2001
File:
PDF, 275 KB
english, 2001
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