The dependence of the carrier density and the mobility on...

Applied Surface Science 2001 Vol. 177; Iss. 1-2

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

M Jung, T.W Kim, D.U Lee, D.C Choo, K.H Yoo, D.L Kim, M.D Kim, H Lim
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Volume:
177
Year:
2001
Language:
english
Pages:
7
DOI:
10.1016/s0169-4332(01)00122-2
File:
PDF, 234 KB
english, 2001
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