Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Yasufumi Fujiwara, Yoichi Nonogaki, Ryo Oga, Atsushi Koizumi, Yoshikazu TakedaVolume:
216
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s0169-4332(03)00515-4
File:
PDF, 146 KB
english, 2003