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Cryogenic, low-noise, balanced amplifiers for the 300–1200 MHz band using heterostructure field-effect transistors
R.F. BradleyVolume:
72
Year:
1999
Language:
english
Pages:
8
DOI:
10.1016/s0920-5632(98)00516-7
File:
PDF, 734 KB
english, 1999