The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device
Kyoung Seok Son, Dae Lim Choi, Ho Nyeon Lee, Won Geon LeeVolume:
2
Year:
2002
Language:
english
Pages:
4
Journal:
Current Applied Physics
DOI:
10.1016/s1567-1739(02)00092-5
File:
PDF, 271 KB
english, 2002