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Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
J.R. YANG, W.C. LI, H.L. TSAI, J.T. HSU, M. SHIOJIRIVolume:
237
Year:
2010
Language:
english
Pages:
7
DOI:
10.1111/j.1365-2818.2009.03242.x
File:
PDF, 460 KB
english, 2010