Metallorganic Chemical Vapor Deposition of TaOxNy as a...

ChemInform 2003 Vol. 34; Iss. 2

Metallorganic Chemical Vapor Deposition of TaOxNy as a High-Dielectric-Constant Material for Next-Generation Devices.

Sung-Lae Cho, Byung-Sung Kim, Hyun-Mi Kim, In Kyu Chun, Ki-Bum Kim
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Volume:
34
Year:
2003
Language:
english
Pages:
1
DOI:
10.1002/chin.200302010
File:
PDF, 63 KB
english, 2003
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