Raman Spectroscopy of γ-Si3N4 and γ-Ge3N4 Nitride Spinel...

Raman Spectroscopy of γ-Si3N4 and γ-Ge3N4 Nitride Spinel Phases Formed at High Pressure and High Temperature: Evidence for Defect Formation in Nitride Spinels.

Emmanuel Soignard, Paul F. McMillan
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Volume:
35
Year:
2004
Pages:
1
DOI:
10.1002/chin.200444010
File:
PDF, 10 KB
2004
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