Volume 18; Issue 4

Japanese Journal of Applied Physics

Volume 18; Issue 4

1

Anisotropy of the Faraday Rotation in the Orthoferrites SmFeO 3 and YFe 1- x Co x /2 Ti x /2 O 3

Gomi, Manabu, Abe, Masanori, Nomura, Shoichiro

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 469 KB

1979

2

Dependence of Resistivity on Donor Dopant Content in Barium Titanate Ceramics

Fukami, Tatsuo, Tsuchiya, Hidetoshi

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 785 KB

1979

3

Refractive Index of In 0.84 Ga 0.16 As 0.46 P 0.54 at Its Laser Oscillating Wavelength of 1.2 µm

Oomura, Etsuji, Murotani, Toshio, Ishii, Makoto, Susaki, Wataru

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 314 KB

1979

4

Optimal Feedback Control of Plasma Parameters in a Tokamak

Ogata, Atsushi, Ninomiya, Hiromasa

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 1.09 MB

1979

5

Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers

Horikoshi, Yoshiji, Furukawa, Yoshitaka

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 929 KB

1979

6

X-Ray Photo-Electron Appearance Potential Spectrum of Titanium

Kato, Susumu, Konishi, Ryōsuke, Mogami, Sadatoshi

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 224 KB

english, 1979

7

Photoelectric Evaluation of a Photovoltaic Detector for a Gaussian Incident Pulse

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 496 KB

english, 1979

8

Transient Response Simulation of Semiconductor Diodes with Deep Impurity Levels

Yamamoto, Takayuki, Nagai, Masaaki, Hariu, Takashi, shibata, Yukio

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 103 KB

english, 1979

9

A General Model for Widegap MIS Light-Emitting Diodes

lawther, Clifford

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 228 KB

english, 1979

10

Carrier Transport in p + -ν Junction Based on Relaxation Semiconductors. II. Experiment

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 866 KB

english, 1979

11

The Effect of Discharge Tube Shape and Flow Velocity on the Electron Temperature of a Medium Pressure Positive Column

Chang, Jen-Shih, Ichikawa, Yukimi, Teii, Shinriki

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 321 KB

english, 1979

12

Vapor Phase Equilibria of Arsenic-Trioxide over Gallium Arsenide

Teramoto, Iwao, Takagi, Hiromitsu, Kano, Gota

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 1.05 MB

english, 1979

13

Magnetic Anisotropy in an Amorphous Fe 80 P 13 C 7 Alloy

Takahashi, Minoru, Miyazaki, Terunobu

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 1.38 MB

1979

14

Morphologic Study of External Cathode Type Hollow-Cathode Discharge

Fujii, Kan-ichi, Miyazawa, Shun-ichi, Takano, Shu-ichi, Oikawa, Toshio

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 709 KB

english, 1979

15

Differential Thermal Analysis Using a Ge–Ag Thermocouple under Hydrostatic Pressure: Phase Behavior of {N(CH 3 ) 4 } 2 MnCl 4

Shimizu, Hiroyasu, Abe, Norio, Yasuda, Naohiko, Fujimoto, Sanji, Sawada, Shozo, Shiroishi, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 351 KB

1979

16

Elastic Behavior of Polycrystalline BaVS 3 in the Temperature Range 40 K to 350 K

Shimada, Masahiko, Koizumi, Mitsue, Takano, Mikio, Nakanishi, Norihiko, Graham, Earl K.

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 699 KB

1979

17

Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques

Nagatomo, Masao, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 763 KB

1979

18

Carrier Transport on p + -ν Junction Based on Relaxation Semiconductors. I. Theory

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 1.42 MB

english, 1979