Volume 111; Issue 1-4

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Journal of Crystal Growth
Volume 111; Issue 1-4

Journal of Crystal Growth

Volume 111; Issue 1-4

1

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 121 KB

english, 1991

2

4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

C.R. Stanley, M.C. Holland, A.H. Kean, J.M. Chamberlain, R.T. Grimes, M.B. Stanaway

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 516 KB

english, 1991

3

Low-temperature growth of GaAs and AlGaAs by MBE and effects of post-growth thermal annealing

J.N. Miller, T.S. Low

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 619 KB

english, 1991

4

Electrical and optical characterization of gas source and solid source MBE low temperature buffers

R.A. Puechner, D.A. Johnson, K.T. Shiralagi, D.S. Gerber, R. Droopad, G.N. Maracas

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 618 KB

english, 1991

5

Graded compositional heterostructures in the GaAs/AlxGa1−xAs system

Stephen Giugni, T.L. Tansley, Grant J. Griffiths

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 539 KB

english, 1991

6

Precise computer control of the MBE process — application to graded InGaAlAs/InP alloys

James C. Vlcek, Clifton G. Fonstad

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 399 KB

english, 1991

7

Growth uniformity studies in molecular beam epitaxy

Z.R. Wasilewski, G.C. Aers, A.J. SpringThorpe, C.J. Miner

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 562 KB

english, 1991

8

Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction

Masayuki Hata, Akiyoshi Watanabe, Toshiro Isu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 859 KB

english, 1991

9

A reflection high-energy electron diffraction study of growth processes at step edges during molecular beam epitaxy of GaAs and AlAs

Hiroshi Tsuda, Takashi Mizutani

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 506 KB

english, 1991

10

Modulated molecular beam study of group III desorption during growth by MBE

J. Zhang, E.M. Gibson, C.T. Foxon, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 348 KB

english, 1991

11

Application of frequency-domain analysis to RHEED oscillation data: time dependence of AlGaAs growth rates

G.W. Turner, S.J. Eglash

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 349 KB

english, 1991

12

Reflectance-difference probing of surface kinetics of (001) GaAs during vacuum chemical epitaxy

G. Paulsson, K. Deppert, S. Jeppesen, J. Jönsson, L. Samuelson, P. Schmidt

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 432 KB

english, 1991

13

In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance difference

Y. González, L. González, F. Briones

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 458 KB

english, 1991

14

Oscillatory As4 surface reaction rates during molecular beam epitaxy of AlAs, GaAs and InAs

J.Y. Tsao, T.M. Brennan, B.E. Hammons

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 482 KB

english, 1991

15

Accurate measurement of MBE substrate temperature

W.S. Lee, G.W. Yoffe, D.G. Schlom, J.S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 470 KB

english, 1991

16

Surface segregation in III–V alloys

J.M. Moison, F. Houzay, F. Barthe, J.M. Gérard, B. Jusserand, J. Massies, F.S. Turco-Sandroff

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 972 KB

english, 1991

17

Thermodynamic analysis of segregation effects in MBE of AIII−BV compounds

S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 991 KB

english, 1991

18

Nonlinear diffusion equation for epitaxial growth and recovery on vicinal surfaces

Andrea K. Myers-Beaghton, Dimitri D. Vvedensky

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 672 KB

english, 1991

19

Surface diffusion of Al and Ga atoms on GaAs (001) and (111) B vicinal surfaces in molecular beam epitaxy

M. Tanaka, T. Suzuki, T. Nishinaga

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 390 KB

english, 1991

20

Surface diffusion and atom incorporation kinetics in MBE of InGaAs and AlGaAs

T. Suzuki, T. Nishinaga

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

21

Control of initial surface configuration for GaAs-on-Si MBE using a Si buffer layer?

G.E. Crook, L. Tapfer, L. Däweritz, R. Cingolani, K. Ploog

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 427 KB

english, 1991

22

Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

A.H. Kean, C.R. Stanley, M.C. Holland, J.L. Martin, J.N. Chapman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 457 KB

english, 1991

23

Modulated molecular beam epitaxy: a successful route toward high quality highly strained heterostructures

J.M. Gérard, J.Y. Marzin, B. Jusserand

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 471 KB

english, 1991

24

Real-time μ-RHEED observations of GaAs surfaces during growth with alternating source supply

Toshiro Isu, Masayuki Hata, Akiyoshi Watanabe

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 616 KB

english, 1991

25

Realization of mirror surface in (111)- and (110)-oriented GaAs by migration-enhanced epitaxy

Y. Takano, M. Lopez, T. Torihata, T. Ikei, Y. Kanaya, K. Pak, H. Yonezu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 401 KB

english, 1991

26

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

Takafumi Yao, Hiroaki Nakahara, Hirofumi Matuhata, Yasumasa Okada

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 830 KB

english, 1991

27

Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality

Y.C. Chen, P.K. Bhattacharya, J. Singh

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 438 KB

english, 1991

28

Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study

J.J. Harris, J.B. Clegg, R.B. Beall, J. Castagné, K. Woodbridge, C. Roberts

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 609 KB

english, 1991

29

Comparison of delta doped GaAs grown by MBE and GSMBE using different arsenic species

M.T. Asom, G. Livescu, M. Geva, V. Swaminathan, L.C. Luther, R.E. Leibenguth, V.D. Mattera, E.F. Schubert, J.M. Kuo, R. Kopf

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 443 KB

english, 1991

30

A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy

J. Nagle, R.J. Malik, D. Gershoni

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 445 KB

english, 1991

31

Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament

W.E. Hoke, P.J. Lemonias, P.S. Lyman, H.T. Hendriks, D. Weir, P. Colombo

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 457 KB

english, 1991

32

Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE

Y. Kadoya, A. Sato, H. Kano, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 367 KB

english, 1991

33

Si doping and MBE growth of GaAs on tilted (111)A substrates

M. Shigeta, Y. Okano, H. Seto, H. Katahama, S. Nishine, K. Kobayashi, I. Fujimoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 310 KB

english, 1991

34

Effect of neutron irradiation on transport in heterostructures

Junming Zhou, Weimin Jin, Jianmin Mao, Yi Huang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 662 KB

english, 1991

35

The growth and physics of high mobility two-dimensional hole gases

A.G. Davies, J.E.F. Frost, D.A. Ritchie, D.C. Peacock, R. Newbury, E.H. Linfield, M. Pepper, G.A.C. Jones

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 406 KB

english, 1991

36

Serpentine superlattice: concept and first results

M.S. Miller, C.E. Pryor, H. Weman, L.A. Samoska, H. Kroemer, P.M. Petroff

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 427 KB

english, 1991

37

Growth kinetics and electronic characteristics of quantum wires

A.K. Myers-Beaghton, J.P.G. Taylor, D.D. Vvedensky, K.J. Hugill, A. MacKinnon

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 602 KB

english, 1991

38

Quantum wire structures by MBE overgrowth on a cleaved edge

Loren Pfeiffer, H.L. Störmer, K. West, K.W. Baldwin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 591 KB

english, 1991

39

Indium incorporation in GaInAs/GaAs quantum wells grown on GaAs

K. Woodbridge, K.J. Moore, N.L. Andrew, P.F. Fewster

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 425 KB

english, 1991

40

Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement

T. Noda, M. Tanaka, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 409 KB

english, 1991

41

Re-examination of the formation mechanism of CuPt-type natural superlattices in alloy semiconductors

Tohru Suzuki, Akiko Gomyo

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 698 KB

english, 1991

42

MBE growth of tilted superlattices: advances and novel structures

P.M. Petroff, M.S. Miller, Y.T. Lu, S.A. Chalmers, H. Metiu, H. Kroemer, A.C. Gossard

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 607 KB

english, 1991

43

Formation of quantum well wire-like structures by MBE growth of AlGaAs/GaAs superlattices on GaAs (110) surfaces

Shigehiko Hasegawa, Masamichi Sato, Kenzo Maehashi, Hajime Asahi, Hisao Nakashima

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 374 KB

english, 1991

44

Stress accomodation in large-mismatch systems

Brian W. Dodson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 623 KB

english, 1991

45

Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures

O. Brandt, L. Tapfer, K. Ploog, M. Hohenstein, F. Phillipp

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 446 KB

english, 1991

46

Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates

Li Chen, K.C. Rajkumar, A. Madhukar, Wei Chen, S. Guha, K. Kaviani

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 393 KB

english, 1991

47

Observation of dark line defects in InGaAs/GaAs strained layer superlattices by photoluminescence topography

Kanji Iizuka, Takashi Yoshida, Toshimasa Suzuki, Haruo Hirose

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 345 KB

english, 1991

48

The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100)

S. Guha, K.C. Rajkumar, A. Madhukar

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

49

Growth and characterization of low temperature AlInAs

R.A. Metzger, A.S. Brown, W.E. Stanchina, M. Lui, R.G. Wilson, T.V. Kargodorian, L.G. McCray, J.A. Henige

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 387 KB

english, 1991

50

Influence of nonuniform charge distribution in In0.53Ga0.47As on the interpretation of dopant incorporation

Stefan P. Svensson, W.A. Beck, D.C. Martel, P.N. Uppal, D.C. Cooke

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 446 KB

english, 1991

51

Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

R. Houdré, F. Gueissaz, M. Gailhanou, J.-D. Ganiére, A. Rudra, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 407 KB

english, 1991

52

MBE overgrowth of implanted regions in InP : Fe substrates

H. Künzel, R. Gibis, W. Schlaak, L.M. Su, N. Grote

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 471 KB

english, 1991

53

Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped GaInAs

Albert Chin, T.Y. Chang, A. Ourmazd, E.M. Monberg, A.M. Chang, C. Kurdak

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 366 KB

english, 1991

54

High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP

F. Gueissaz, R. Houdré, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 424 KB

english, 1991

55

Orientation dependence of mismatched InxAl1−xAs/In0.53Ga0.47As HFETs

Sandeep R. Bahl, Walid J. Azzam, Jesús A. del Alamo

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 395 KB

english, 1991

56

MBE growth of graded index AlGaInAs MQW lasers on InP

M. Allovon, M. Quillec, M. Blez, C. Kazmierski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 441 KB

english, 1991

57

Molecular beam epitaxial growth and structural design of In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs

Yi-Ching Pao, J.S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 389 KB

english, 1991

58

High quality InP and In1−xGaxAsyP1−y grown by gas source MBE

Marc Lambert, Léon Goldstein, Antonina Perales, Fabienne Gaborit, Christophe Starck, Jean-Louis Lievin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 593 KB

english, 1991

59

Gas source MEE (migration enhanced epitaxy) growth of InP

Nobuyuki Takeyasu, Hajime Asahi, Soon Jae Yu, Kumiko Asami, Tadaaki Kaneko, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 392 KB

english, 1991

60

Residual impurities originating from AsH3 in GS-MBE grown GaAs

S. Nagao, Y. Inoue, E. Kawanishi, H. Gotoh

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 329 KB

english, 1991

61

Abruptness of GaAs/AlInP hetero-interfaces grown by GS-MBE

S. Nagao, M. Takashima, Y. Inoue, M. Katoh, H. Gotoh

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 475 KB

english, 1991

62

Improved InGaP/GaAs hetetointerfaces during gas-source MBE growth

H.Y. Lee, M.J. Hafich, G.Y. Robinson, K. Mahalingam, N. Otsuka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 291 KB

english, 1991

63

A review of CBE, MOMBE and GSMBE

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 797 KB

english, 1991

64

A comparison of MBE and MOMBE/CBE growth mechanisms using modulated beam mass spectrometry and RHEED

C.T. Foxon, E.M. Gibson, J. Zhang, B.A. Joyce, D.E. Lacklison

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 397 KB

english, 1991

65

Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy

Junji Saito, Takeshi Maeda, Katsuji Ono, Kazuo Kondo

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 510 KB

english, 1991

66

The roles of group-V species in metalorganic molecular-beam epitaxy and chemical-beam epitaxy of III–V compounds

B.W. Liang, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

67

Metalorganic molecular beam epitaxy of GaAs using hydrogen radical beam

Akiyoshi Watanabe, Masayuki Hata, Toshiro Isu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 378 KB

english, 1991

68

Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP

T.J. de Lyon, N.I. Buchan, P.D. Kirchner, J.M. Woodall, D.T. McInturff, G.J. Scilla, F. Cardone

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 571 KB

english, 1991

69

In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask

Y. Hiratani, Y. Ohki, Y. Sugimoto, K. Akita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 355 KB

english, 1991

70

Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties

J.C. Garcia, P. Maurel, P. Bove, J.P. Hirtz, A. Barski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 456 KB

english, 1991

71

The optimization of InxGa1−xAs and InP growth conditions by CBE

M.E. Sherwin, G.O. Munns, M.E. Elta, E.G. Woelk, S.B. Crary, F.L. Terry, G.I. Haddad

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 416 KB

english, 1991

72

Growth of GaInAs and GaInAsP lattice matched to InP by metalorganic MBE

H. Heinecke, B. Baur, R. Höger, A. Miklis, R. Treichler

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 477 KB

english, 1991

73

The design of an ECR plasma system and its application to InP grown by CBE

M.E. Sherwin, G.O. Munns, E.G. Woelk, T.J. Drummond, M.E. Elta, F.L. Terry, G.I. Haddad

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

74

Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams

Mitsuaki Yano, Hisakazu Yokose, Yoshio Iwai, Masataka Inoue

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 410 KB

english, 1991

75

Indium antimonide doped with lead telluride grown by molecular beam epitaxy

D.L. Partin, J. Heremans, C.M. Trush

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 391 KB

english, 1991

76

Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

J.F. Chen, A.Y. Cho

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 340 KB

english, 1991

77

Transport properties of heterostructures based on GaSb, InAs and InSb on GaAs substrates

P.N. Uppal, D.M. Gill, S.P. Svensson, D.C. Cooke

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 423 KB

english, 1991

78

Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructures

J.H. Kim, D. Yang, Y.-C. Chen, P. Bhattacharya

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 362 KB

english, 1991

79

Electrical characteristics dependence on aluminum mole fraction in (Al0.5Ga0.5)Sb/InAs/(AlxGa1−x)Sb heterostructure

Kanji Yoh, Toshiaki Moriuchi, Mitsuaki Yano, Masataka Inoue

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 337 KB

english, 1991

80

The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells

S.A. Chalmers, H. Kroemer, A.C. Gossard

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 400 KB

english, 1991

81

Studies of the tunneling currents in the InAs/AlSb/GaSb single-barrier interband tunneling diodes grown on GaAs substrates

J.F. Chen, L. Yang, M.C. Wu, S.N.G. Chu, A.Y. Cho

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 360 KB

english, 1991

82

Interband tunneling in InAs/GaSb/AlSb heterostructures

D.A. Collins, D.Z.-Y. Ting, E.T. Yu, D.H. Chow, J.R. Söderström, Y. Rajakarunanayake, T.C. McGill

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 392 KB

english, 1991

83

MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers

S.J. Eglash, H.K. Choi, G.W. Turner

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 688 KB

english, 1991

84

New MBE growth method for InSb quantum well boxes

Nobuyuki Koguchi, Satoshi Takahashi, Toyohiro Chikyow

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 498 KB

english, 1991

85

New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE

J.P. Faurie, R. Sporken, S. Sivananthan, M.D. Lange

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.30 MB

english, 1991

86

A novel technique for the MBE growth of twin-free HgCdTe

R.W. Yanka, K.A. Harris, L.M. Mohnkern, T.H. Myers

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 440 KB

english, 1991

87

Very low temperature growth and doping of Hg-based epilayers and superlattices

Y. Lansari, Z. Yang, S. Hwang, F.E. Reed, A.T. Sowers, J.W. Cook Jr., J.F. Schetzina

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 400 KB

english, 1991

88

Chemical beam epitaxy of CdTe, HgTe, and HgCdTe

R.G. Benz II, B.K. Wagner, D. Rajavel, C.J. Summers

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 408 KB

english, 1991

89

Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers

A.N. Tiwari, W. Floeder, S. Blunier, H. Zogg, M.J. Proctor

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 529 KB

english, 1991

90

Atomic layer epitaxy of (CdTe)m(ZnTe)n-ZnTe multiquantum wells on (001)GaAs substrate

Jie Li, Li He, Wei Shan, Xingyu Cheng, Shixin Yuan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

91

ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties

J. Qiu, D.R. Menke, M. Kobayashi, R.L. Gunshor, Q.-D. Qian, D. Li, N. Otsuka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 488 KB

english, 1991

92

Growth and characterization of ZnSe on (NH4) 2Sx-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe

Yi-hong Wu, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 421 KB

english, 1991

93

Quantum wells with zincblende MnTe barriers

J. Han, S.M. Durbin, R.L. Gunshor, M. Kobayashi, D.R. Menke, N. Pelekanos, M. Hagerott, A.V. Nurmikko, Y. Nakamura, N. Otsuka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 459 KB

english, 1991

94

Substitutional doping of ZnSe films

J. Ren, K.A. Bowers, S. Hwang, J.W. Cook Jr., J.F. Schetzina

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 388 KB

english, 1991

95

n-Type and p-type conductivity control of ZnSe grown by metalorganic molecular beam epitaxy using methyliodide and ammonia

Masahito Migita, Akira Taike, Hajime Yamamoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 463 KB

english, 1991

96

Electric field assisted doping of semiconductors during epitaxial growth

Y. Rajakarunanayake, J.O. McCaldin, T.C. McGill

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 402 KB

english, 1991

97

(ZnSe)m-(ZnTe)n short-period strained layer superlattices prepared by atomic layer epitaxy

Yasushi Takemura, Hideki Nakanishi, Makoto Konagai, Kiyoshi Takahashi, Yoshio Nakamura, Nobuo Otsuka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

98

Growth and properties of new wide-gap quantum well structures: Zn1−xMnxSe/Zn1−yCdySe

N. Samarth, H. Luo, J. Buschert, J.K. Furdyna, W.J. Walecki, A.V. Nurmikko, R.G. Alonso, Eun-Soon Oh, A.K. Ramdas, N. Otsuka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 343 KB

english, 1991

99

Characterization of CdSe/ZnTe heterojunctions

M.C. Phillips, E.T. Yu, Y. Rajakarunanayake, J.O. McCaldin, D.A. Collins, T.C. McGill

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 238 KB

english, 1991

100

Fabrication of ZnS/(ZnSe)n/ZnS single quantum well structures and photoluminescence properties

T. Yao, M. Fujimoto, S.K. Chang, H. Tanino

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 497 KB

english, 1991

101

Limited thickness epitaxy of semiconductors and Si MBE down to room temperature

D.J. Eaglesham, H.-J. Gossmann, M. Cerullo, L.N. Pfeiffer, K.W. West

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 477 KB

english, 1991

102

Buried, ordered structures: Boron in Si(111) and Si(100)

R.L. Headrick, B.E. Weir, A.F.J. Levi, D.J. Eaglesham, L.C. Feldman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 422 KB

english, 1991

103

Simulation with animation: microscopic growth kinetics of Si(001) homoepitaxy

M.R. Wilby, M.W. Ricketts, S. Clarke, D.D. Vvedensky

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 428 KB

english, 1991

104

Group IV element (Si, Ge and α-Sn) superlattices — low temperature MBE

K. Eberl, W. Wegscheider, G. Abstreiter

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 705 KB

english, 1991

105

Silicon heteroepitaxy: interface structure and physical properties

H. von Känel, E. Müller, H.-U. Nissen, W. Bacsa, M. Ospelt, K.A. Mäder, R. Stalder, A. Baldereschi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 782 KB

english, 1991

106

Structure dependence of photoluminescence in Gen/Sim strained-layer superlattices

Kazushi Miki, Hajime Okumura, Kunihiro Sakamoto, Hirofumi Matsuhata, Tsunenori Sakamoto, Sadafumi Yoshida

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 455 KB

english, 1991

107

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

A.R. Powell, R.A.A. Kubiak, S.M. Newstead, C. Parry, N.L. Mattey, D.W. Smith, J.C. Brighten, C.J. Emeleus, T. Naylor, E. Basaran, T.E. Whall, M.G. Dowsett, R.D. Barlow, E.H.C. Parker, D.K. Bowen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

108

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

Masanobu Miyao, Eiichi Murakami, Hiroyuki Etoh, Kiyokazu Nakagawa, Akio Nishida

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 306 KB

english, 1991

109

Transport properties of p-Si/SiGe single-modulation-doped heterostructures grown by MBE

D.J. Gravesteijn, T. Mishima, C.W. Fredriksz, G.F.A. van de Walle, R.A. van den Heuvel

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 376 KB

english, 1991

110

Dislocation-related photoluminescence in Si1−xGex/Si(100) grown by molecular beam epitaxy

Koichi Terashima, Michio Tajima, Akira Sakai, Toru Tatsumi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 722 KB

english, 1991

111

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

W.T. Pike, L.M. Brown, R.A.A. Kubiak, S.M. Newstead, A.R. Powell, E.H.C. Parker, T.E. Whall

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.10 MB

english, 1991

112

Strain modification by ion-assisted molecular beam epitaxy in the SixGe1−x alloy system: a kinetic analysis

C.J. Tsai, P. Rozenak, H.A. Atwater, T. Vreeland

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 462 KB

english, 1991

113

Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics

V.P. Kesan, P.G. May, F.K. LeGoues, S.S. Iyer

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 673 KB

english, 1991

114

The growth and electronic properties of α-Sn thin films grown on InSb(100) and (111) substrates by molecular beam epitaxy (MBE)

W.T. Yuen, W.K. Liu, R.A. Stradling, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 479 KB

english, 1991

115

Control of misoriented grains and pinholes in CoSi2 grown on Si(001)

L.J. Schowalter, J.R. Jimenez, L.M. Hsiung, K. Rajan, Shin Hashimoto, R.D. Thompson, S.S. Iyer

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 874 KB

english, 1991

116

Characterization and application of fine-patterned Si/CoSi2/Si double heterostructures fabricated by self-aligned, two-step MBE

Masanobu Miyao, Kiyokazu Nakagawa, Nobuo Nakamura, Takashi Ohshima

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

117

Growth and properties of high Tc films in Y1Ba2Cu3O7−x perovskite by molecular beam epitaxy

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 620 KB

english, 1991

118

Growth of superconducting Bi2Sr2Can−1CunOx thin films by atomically layered epitaxy

J.N. Eckstein, I. Bozovic, D.G. Schlom, J.S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 381 KB

english, 1991

119

MBE growth of ferromagnetic metastable epitaxial MnAl thin films on AlAs/GaAs heterostructures

J.P. Harbison, T. Sands, R. Ramesh, L.T. Florez, B.J. Wilkens, V.G. Keramidas

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 728 KB

english, 1991

120

MBE growth and properties of Fe3(Al,Si) on GaAs(100)

M. Hong, H.S. Chen, J. Kwo, A.R. Kortan, J.P. Mannaerts, B.E. Weir, L.C. Feldman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 490 KB

english, 1991

121

P-Type diluted magnetic III–V semiconductors

H. Munekata, H. Ohno, R.R. Ruf, R.J. Gambino, L.L. Chang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 432 KB

english, 1991

122

Growth and novel properties of magnetic heterostructures by molecular beam epitaxy

J.M. Hong, D.D. Awschalom, F. Agulló-Rueda, L.L. Chang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 708 KB

english, 1991

123

Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

W.E. Hoke, P.J. Lemonias, D.G. Weir

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 411 KB

english, 1991

124

Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials

Atsushi Koma, Keiji Ueno, Koichiro Saiki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 367 KB

english, 1991

125

Growth of MoSe2 thin films with Van der Waals epitaxy

F.S. Ohuchi, T. Shimada, B.A. Parkinson, K. Ueno, A. Koma

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 760 KB

english, 1991

126

Reconstruction structure at Ga2Se3/GaAs epitaxial interface

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R.L. Gunshor

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 417 KB

english, 1991

127

MBE as a production technology for AlGaAs lasers

Haruo Tanaka, Masato Mushiage

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 297 KB

english, 1991

128

Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using As2

C.T. Foxon, P. Blood, E.D. Fletcher, D. Hilton, P.J. Hulyer, M. Vening

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 388 KB

english, 1991

129

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Y.H. Wang, K. Tai, Y.F. Hsieh, S.N.G. Chu, J.D. Wynn, M. Hong, R.J. Fischer, A.Y. Cho

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 623 KB

english, 1991

130

A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors

M. Hong, J.P. Mannaerts, J.M. Hong, R.J. Fischer, K. Tai, J. Kwo, J.M. Vandenberg, Y.H. Wang, J. Gamelin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 433 KB

english, 1991

131

MBE growth of InP/InGaAs MQW modulators

E.G. Scott, M.A.Z. Rejman-Greene

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 297 KB

english, 1991

132

Quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by solid source molecular beam epitaxy

P.A. Claxton, M. Hopkinson, J. Kovac, G. Hill, M.A. Pate, J.P.R. David

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 278 KB

english, 1991

133

Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration

H. Künzel, R. Kaiser, W. Passenberg, D. Trommer, G. Unterbörsch

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 464 KB

english, 1991

134

Investigation of a double barrier resonant tunnelling structure which incorporates an optical window layer in the top contact

M. Henini, C.R.H. White, P.E. Simmonds, L. Eaves, M.S. Skolnick, D.K. Maude, O.H. Hughes, J.C. Portal

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 466 KB

english, 1991

135

MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness

H. Riechert, D. Bernklau, J.-P. Reithmaier, R.D. Schnell

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 407 KB

english, 1991

136

MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates

S. Shimomura, N. Okamoto, M. Takeuchi, E. Tamaoka, Y. Yuba, S. Namba, S. Hiyamizu, M. Shigeta, T. Yamamoto, K. Kobayashi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 475 KB

english, 1991

137

Author index

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.38 MB

english, 1991

138

Subject index

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 314 KB

english, 1991

139

Preface

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 77 KB

english, 1991

140

Advances in molecular beam epitaxy (MBE)

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.22 MB

english, 1991

141

Variation of background impurities in AlxGa1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness

Naresh Chand, T.D. Harris, S.N.G. Chu, E.E. Becker, A.M. Sergent, M. Schnoes, D.V. Lang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

142

Properties and applications of AlxGa1−xAs (0 ≤ χ ≤1) grown at low temperatures

T.Y. Chu, A. Dodabalapur, A. Srinivasan, D.P. Neikirk, B.G. Streetman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 379 KB

english, 1991

143

GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates

M.R. Melloch, K. Mahalingam, N. Otsuka, J.M. Woodall, A.C. Warren

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 388 KB

english, 1991

144

Composition control of GaAsP grown by molecular beam epitaxy

Takashi Nomura, Hiroshi Ogasawara, Masahiro Miyao, Minoru Hagino

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 318 KB

english, 1991

145

Dynamics and roughness spectrum of the GaAs(001) surface during the MBE process

L. Däweritz, J. Griesche, R. Hey, J. Herzog

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

146

MBE monolayer growth control by in-situ electron microscopy

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 787 KB

english, 1991

147

Correlation between the dampening of RHEED oscillations and the photoluminescence of quantum wells in the presence of AsO

Thomas R. Block, B.G. Streetman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 604 KB

english, 1991

148

A novel in-situ molecular beam epitaxy monitoring system using low energy ion scattering

Minoru Kubo, Tadashi Narusawa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 391 KB

english, 1991

149

Monte Carlo simulation of MBE growth of the 2 × 4 reconstructed GaAs(001) surface

J.M. McCoy, P.A. Maksym

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

150

Atomic layer molecular beam epitaxy (ALMBE): growth kinetics and applications

F. Briones, A. Ruiz

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 614 KB

english, 1991

151

Optical investigation of GaAs growth process in molecular beam epitaxy and migration-enhanced epitaxy

Yoshiji Horikoshi, Minoru Kawashima, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 357 KB

english, 1991

152

Improved device performance by migration-enhanced epitaxy

Pin Ho, S.C. Wang, T. Yu, J.M. Ballingall, P.A. Martin, K.H.G. Duh, S.M.J. Liu, G.A. Hutchins, E.L. Hall

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 492 KB

english, 1991

153

Reduced silicon donor incorporation in MBE grown GaAs layers using cracker-generated dimer arsenic

B.J. Wu, Y.J. Mii, M. Chen, K.L. Wang, J.J. Murray

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 648 KB

english, 1991

154

Hydrogen passivation of delta doped GaAs

M.T. Asom, V. Swaminathan, G. Livescu, M. Geva, L.C. Luther, R.E. Leibenguth, V.D. Mattera, T. Hayes

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 323 KB

english, 1991

155

Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

T.H. Chiu, J.E. Cunningham, J.A. Ditzenberger, W.Y. Jan, S.N.G. Chu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 437 KB

english, 1991

156

Modulation doped inverted and normal GaAs/AlxGa1−xAs heterostructures: influence of Si-segregation on the two-dimensional electron gas

K. Köhler, P. Ganser, M. Maier, K.H. Bachem

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 434 KB

english, 1991

157

The growth and characterisation of back-gated high mobility two-dimensional electron gas structures

D.A. Ritchie, J.E.F. Frost, D.C. Peacock, E.H. Linfield, A. Hamilton, G.A.C. Jones

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 407 KB

english, 1991

158

The growth of shallow high mobility two-dimensional electron gas structures

J.E.F. Frost, D.A. Ritchie, G.A.C. Jones

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 324 KB

english, 1991

159

Anisotropy in electronic transport of modulation doped structures having strained InGaAs wells

C. Webb, J.N. Eckstein, Y.M. Desai

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 357 KB

english, 1991

160

High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates

K. Inoue, J.C. Harmand, T. Matsuno

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 391 KB

english, 1991

161

Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers

K. Ploog, A. Fischer, L. Tapfer, B.F. Feuerbacher

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 402 KB

english, 1991

162

Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells

M. Santos, J. Jo, M. Shayegan, A.-M. Lanzillotto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 398 KB

english, 1991

163

Optical studies of InAs/GaAs on GaAs short-period strained-layer superlattices grown by MBE and MEE

T.C. Hasenberg, D.S. McCallum, X.R. Huang, A.L. Smirl, M.D. Dawson, T.F. Boggess

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 418 KB

english, 1991

164

Strain induced change in band offsets at pseudomorphically grown InAs/GaAs heterointerfaces characterized by X-ray photoelectron spectroscopy

Y. Hashimoto, K. Hirakawa, K. Harada, T. Ikoma

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 346 KB

english, 1991

165

Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy

Mitsuaki Yano, Kanji Yoh, Takanori Iwawaki, Yoshio Iwai, Masataka Inoue

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 405 KB

english, 1991

166

Fabrication and characterization of MBE grown InAs/GaAs strained-layer superlattices on variously oriented substrates

Kazuhiro Kudo, Jong Sik Lee, Kuniaki Tanaka, Yunosuke Makita, Akimasa Yamada

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 365 KB

english, 1991

167

Indium desorption during MBE growth of strained InGaAs layers

J.-P. Reithmaier, H. Riechert, H. Schlötterer, G. Weimann

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 428 KB

english, 1991

168

A photoluminescence study of indium desorption from strained Ga1−xInxAs/GaAs

M.T. Emeny, L.K. Howard, K.P. Homewood, J.D. Lambkin, C.R. Whitehouse

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 548 KB

english, 1991

169

Molecular beam epitaxial growth and properties of highly strained InxGa1−xAs/GaAs multiple quantum wells

S. Niki, W.S.C. Chang, H.H. Wieder, T.E. Van Eck

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 384 KB

english, 1991

170

Electrooptic effects of piezo-electrically strained AlGaAs/GaAs(111) quantum wells

S.M. Shank, G.W. Wicks

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 413 KB

english, 1991

171

High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators

T.Y. Chang, N.J. Sauer, J.E. Zucker, K.L. Jones, B. Tell, K. Brown-Goebeler, M. Wegener, D.S. Chemla

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 376 KB

english, 1991

172

GSMBE growth of GaAs at low AsH3 cracking temperatures

M.J. Hafich, H.Y. Lee, P. Silvestre, G.Y. Robinson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 364 KB

english, 1991

173

Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ−Be

J.E. Cunningham, T.Y. Kuo, A. Ourmazd, K. Goossen, W. Jan, F. Storz, F. Ren, C.G. Fonstad

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 537 KB

english, 1991

174

The role of aluminum and hydrogen in impurity contamination of AlGaAs grown by MOMBE

C.R. Abernathy, S.J. Pearton, D.A. Bohling, G.T. Muhr

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 388 KB

english, 1991

175

MOMBE growth and characterization of heavily carbon-doped InGaAs

Takumi Yamada, Shinji Nozaki, Ryuji Miyake, Taichi Fukamachi, Jun-ichi Shirakashi, Makoto Konagai, Kiyoshi Takahashi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 446 KB

english, 1991

176

Luminescence and transport properties of high quality InP grown by CBE between 450 and 550°C

A. Rudra, J.F. Carlin, M. Proctor, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 385 KB

english, 1991

177

Growth and properties of GaAsSb/InGaAs superlattices on InP

J.F. Klem, S.R. Kurtz, A. Datye

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 495 KB

english, 1991

178

MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

Tadaaki Kaneko, Hajime Asahi, Yasushi Itani, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 442 KB

english, 1991

179

Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures

K.F. Longenbach, L.F. Luo, S. Xin, W.I. Wang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 667 KB

english, 1991

180

MBE growth and characterization of InxGa1−xSb/InAs strained layer superlattices

R. Fashe, J.T. Zborowski, T.D. Golding, H.D. Shih, P.C. Chow, K. Matsuichi, B.C. Covington, A. Chi, J. Zheng, H.F. Schaake

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 403 KB

english, 1991

181

Growth of InAs/Ga1−xInxSb infrared superlattices

D.H. Chow, R.H. Miles, C.W. Nieh, T.C. McGill

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 494 KB

english, 1991

182

Strong nonlinear optical enhancement in MBE-grown Bi1−xSbx

E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, D.L. Partin, C.M. Thrush, J.P. Heremans

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 395 KB

english, 1991

183

Application of the RHEED oscillation technique to the growth of II–VI compounds: CdTe, HgTe and their related alloys

L. Ulmer, N. Magnea, H. Mariette, P. Gentile

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 333 KB

english, 1991

184

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M.C. Tamargo, R.E. Nahory, B.J. Skromme, S.M. Shibli, A.L. Weaver, R.J. Martin, H.H. Farrell

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

185

High-quality ZnSe/GaAs superlattices: MEE growth, and structural and optical characterization

S. Ramesh, N. Kobayashi, Y. Horikoshi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

186

Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices

F.S. Turco-Sandroff, R.E. Nahory, M.J.S.P. Brasil, R.J. Martin, R. Beserman, L.A. Farrow, J.M. Worlock, A.L. Weaver

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

187

Photo-assisted MBE growth of ZnSe on GaAs substrates

N. Matsumura, T. Fukada, K. Senga, Y. Fukushima, J. Saraie

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 425 KB

english, 1991

188

Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED

Masakazu Ohishi, Hiroshi Saito, Hiroshi Torihara, Yasunori Fujisaki, Kenzo Ohmori

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 435 KB

english, 1991

189

Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

K. Ohkawa, T. Karasawa, T. Mitsuyu

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 385 KB

english, 1991

190

Determination of refractive index and study of absorption in wide gap II–VI semiconductor superlattices

Aidong Shen, Jie Cui, Yunliang Chen, Hailong Wang, Aizhen Li

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 314 KB

english, 1991

191

The study of phonos and lattice strains in ZnSe-ZnTe and ZnS-ZnSe strained-layer superlattices by Raman and far-infrared reflectivity spectra

Jie Cui, Hailong Wang, Fuxi Gan, Aizhen Li

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 457 KB

english, 1991

192

Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodes

J. Ren, K.A. Bowers, B. Sneed, F.E. Reed, J.W. Cook Jr., J.F. Schetzina

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 353 KB

english, 1991

193

Redistribution of delta-doped Sb in Si

S.J. Fukatsu, S. Kubo, Y. Shiraki, R. Ito

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 311 KB

english, 1991

194

Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

V.P. Kesan, S.S. Iyer, J.M. Cotte

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 612 KB

english, 1991

195

B doping effect on gas source Si-MBE growth: a comparison of B2H6 gas doping and HBO2 Knudsen cell doping

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama, Toru Tatsumi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 345 KB

english, 1991

196

Limitations of selective epitaxial growth conditions in gas-source MBE using Si2H6

Ken-ichi Aketagawa, Toru Tatsumi, Junro Sakai

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 383 KB

english, 1991

197

Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

M. Kitabatake, P. Fons, J.E. Greene

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 449 KB

english, 1991

198

Scanning tunneling microscopy studies of the growth process of Ge on Si(001)

Y.-W. Mo, M.G. Lagally

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 598 KB

english, 1991

199

MBE SimGen strained monolayer superlattices

M.A. Kallel, V. Arbet-Engels, K.L. Wang, R.P.G. Karunasiri

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 381 KB

english, 1991

200

3 × 3 -B structure on a 5 × 5 GexSi1−x/Si(111) surface and its electrical conduction

T. Tatsumi, I. Hirosawa, T. Niino, H. Hirayam, J. Mizuki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 343 KB

english, 1991

201

Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures

J.D. Ralston, J. Wagner, F. Fuchs, P. Hiesinger, J. Schmälzlin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 647 KB

english, 1991

202

RHEED studies of epitaxial growth of CoGa on GaAs by MBE — determination of epitaxial phases and orientations

T.C. Kuo, T.W. Kang, K.L. Wang

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

203

Molecular beam epitaxial growth of Cr/Fe, Ag/Fe, Ag/Cr and Ag/Co superlattices on MgO (001) substrates

P. Etienne, J. Massies, S. Lequien, R. Cabanel, F. Petroff

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 667 KB

english, 1991

204

Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors

M. Hong, L.W. Tu, J. Gamelin, Y.H. Wang, R.J. Fischer, E.F. Schubert, K. Tai, G. Hasnain, J.P. Mannaerts, B.E. Weir, J.D. Wynn, R.F. Kopf, G.J. Zydzik, A.Y. Cho

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 418 KB

english, 1991

205

GaInAs/InP MQW and DBR growth for surface emitting lasers by CBE

T.K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 277 KB

english, 1991

206

MBE grown, visible, surface emitting harmonic generation lasers

R.L. Williams, F. Chatenoud, R. Normandin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 324 KB

english, 1991

207

Transport in AlxGa1−xAs/InyGa1−yAs resonant tunnelling diodes with asymmetric layers

Hyungmo Yoo, Stephen M. Goodnick, John R. Arthur

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 431 KB

english, 1991

208

Highly strained pseudomorphic InxGa1−xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates

R.M. Kapre, A. Madhukar, S. Guha

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 659 KB

english, 1991

209

Comprehensive analysis of epitaxial Al/AlxGa1−xAs Schottky barriers made by MBE: barrier heights and band edge discontinuities

M. Missous, E.H. Rhoderick, K.E. Singer, W.S. Truscott

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 418 KB

english, 1991

210

Initial growth stage of InAs/GaAs studied by RHEED-TRAXS method

J. Shigetomi, K. Fuwa, S. Shimizu, H. Yamakawa, S. Ino

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

211

p+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sources

A. Sandhu, T. Fujii, H. Ando, T. Takahashi, H. Ishikawa, N. Yokoyama

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 415 KB

english, 1991