Volume 139; Issue 3-4

Journal of Crystal Growth

Volume 139; Issue 3-4
2

Sulphur incorporation in GaSb layers grown by liquid phase electroepitaxy

Year:
1994
Language:
english
File:
PDF, 477 KB
english, 1994
4

Density measurement of molten silicon by an improved Archimedian method

Year:
1994
Language:
english
File:
PDF, 472 KB
english, 1994
7

p-Type doping of Hg0.4Cd0.6Te using Et4Sb2

Year:
1994
Language:
english
File:
PDF, 271 KB
english, 1994
17

Growth and characteristics of Mg2SiO4: Ti crystal

Year:
1994
Language:
english
File:
PDF, 348 KB
english, 1994
18

Influence of initial crystal size on growth rate of crystals from solutions

Year:
1994
Language:
english
File:
PDF, 273 KB
english, 1994
24

Crystal growth of laser oxides in the vertical Bridgman configuration

Year:
1994
Language:
english
File:
PDF, 1.81 MB
english, 1994
25

Author index

Year:
1994
Language:
english
File:
PDF, 275 KB
english, 1994
26

Subject index

Year:
1994
Language:
english
File:
PDF, 139 KB
english, 1994
27

Instructions to authors

Year:
1994
Language:
english
File:
PDF, 109 KB
english, 1994