Volume 169; Issue 4

Main
Journal of Crystal Growth
Volume 169; Issue 4

Journal of Crystal Growth

Volume 169; Issue 4

1

Characteristics of diamond crystals deposited on quartz substrates by chemical vapor deposition

Yafei Zhang, Liping Xie, Zhonghua Zhou, Janwei Sun, Shuit-Tong Lee

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.36 MB

english, 1996

2

The influence of thermosolutal convection on CdTe growth by the traveling heater method

Xing Ye, B. Tabarrok, D. Walsh

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 852 KB

english, 1996

3

Ar+-laser-assisted subatomic-layer epitaxy of Si

Yoshiyuki Suda, Masahiro Ishida, Mitsutomi Yamashita

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 698 KB

english, 1996

4

Real-time observations of faceting and shrinkage processes of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates

X.Q. Shen, H.W. Ren, M. Tanaka, T. Nishinaga

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.66 MB

english, 1996

5

Floating-zone growth and characterization of Fe2SiO4 single crystals

Tse-Lun Tsai, Steven A. Markgraf, Ru¨diger Dieckmann

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 533 KB

english, 1996

6

Growth of(FexMg1 − x)2SiO4 single crystals by the double pass floating zone method

Tse-Lun Tsai, Steven A. Markgraf, Mikio Higuchi, Ru¨diger Dieckmann

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.02 MB

english, 1996

7

A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE system

M. Kimura, S. Dost, H. Udono, A. Tanaka, T. Sukegawa, Z. Qin

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 554 KB

english, 1996

8

Structural characterization of a-axis orientedYBa2Cu3Ox films grown by liquid phase epitaxy

M. Mukaida, S. Miyazawa, C. Klemenz, H.J. Scheel

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.93 MB

english, 1996

9

Bis-phosphino-methane: a new precursor for metalorganic vapor phase epitaxy of phosphides

M. Geiger, D. Ottenwa¨lder, F. Scholz, M. Glanz, C. Recker, J. Winterfeld, H. Schumann

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 241 KB

english, 1996

10

Vapor phase epitaxy of GaN usingGaCl3N2 andNH3N2

Heon Lee, James S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.22 MB

english, 1996

11

Influence of growth interruption on the heterointerface morphology ofInGaAsGaAs strained quantum wells

J.R. Botha, A.W.R. Leitch

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.02 MB

english, 1996

12

Oriented liquid inclusions in KDP crystals

I. Smolski, J.J. De Yoreo, N.P. Zaitseva, J.D. Lee, T.A. Land, E.B. Rudneva

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 2.19 MB

english, 1996

13

Crystal growth of ZnSe by PVT using a semi-open ampule

S. Fujiwara, T. Kotani, K. Matsumoto, T. Shirakawa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 457 KB

english, 1996

14

Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

P. Kidd, D.J. Dunstan, H.G. Colson, M.A. Louren¸o, A. Sacedo´n, F. Gonza´lez-Sanz, L. Gonza´lez, Y. Gonza´lez, R. Garci´a, D. Gonza´lez, F.J. Pacheco, P.J. Goodhew

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.22 MB

english, 1996

15

Anomaly in dendritic growth data — effect of density change upon solidification

Vladimir Pines, Arnon Chait, Marianne Zlatkowski

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

16

Growth and morphology of W18O49 crystals produced by microwave decomposition of ammonium paratungstate

J. Pfeifer, E. Badaljan, P. Tekula-Buxbaum, T. Kova´cs, O. Geszti, A.L. To´th, H.-J. Lunk

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.43 MB

english, 1996

17

A new technique for growing crystals from the vapor

Jon Nelson, Charles A. Knight

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

18

Author index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 640 KB

english, 1996

19

Subject index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 120 KB

english, 1996

20

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Liwu Lu, Songlin Feng, Junying Xu, Hui Yang, Zhanguo Wang, J. Wang, Y. Wang, Weikun Ge

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

21

Fundamental study of crystal/melt interface shape change in Czochralski crystal growth

Xiao-Bo Wu, Xu Geng, Zeng-Yuan Guo

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 552 KB

english, 1996

22

Growth of barium borate crystals from sodium fluoride solutions

M. Roth, D. Perlov

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 838 KB

english, 1996

23

Growth and characterization of Cd1 − x − yZnxMnyTe crystals

W.C. Chou, F.R. Chen, T.Y. Chiang, H.Y. Shin, C.Y. Sun, C.M. Lin, K. Chern-Yu, C.T. Tsai, D.S. Chuu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

24

Protein interactions and crystallization

D.F. Rosenbaum, C.F. Zukoski

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 479 KB

english, 1996

25

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Xuekun Lu, Zuimin Jiang, Kaifeng Liu, Haijun Zhu, Xiangjiu Zhang, Xun Wang

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 3.31 MB

english, 1996

26

Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, T. Imai

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 681 KB

english, 1996

27

Step bunching on a vicinal face of a crystal growing in a flowing solution

S.R. Coriell, B.T. Murray, A.A. Chernov, G.B. McFadden

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 974 KB

english, 1996

28

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

Liwu Lu, Songlin Feng, Jiben Liang, Zhanguo Wang, J. Wang, Y. Wang, Weikun Ge

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

29

Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy

Myeongcheol Kim, H.J. Thieme, G. Lippert, H.J. Osten

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 533 KB

english, 1996

30

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

Y. Hayakawa, S. Iida, T. Sakurai, H. Yanagida, M. Kikuzawa, T. Koyama, M. Kumagawa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 2.63 MB

english, 1996