Volume 81; Issue 1-4

Journal of Crystal Growth

Volume 81; Issue 1-4
1

Editorial Board

Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 74 KB
english, 1987
2

Preface

C.T. Foxon, J.J. Harris
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 80 KB
english, 1987
8

Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy

E.S. Hellman, J.S. Harris Jr.
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 514 KB
english, 1987
10

Monolayer and bilayer growth on Ge(111)

J. Aarts, W.M. Gerits, P.K. Larsen
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 93 KB
english, 1987
11

First stages of the MBE growth of InAs on (001)GaAs

F. Houzay, C. Guille, J.M. Moison, P. Henoc, F. Barthe
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 569 KB
english, 1987
17

Growth and properties of quasiperiodic heterostructures

Roy Clarke, J. Todd, R. Merlin, K. Bajema, P.K. Bhattacharya, F.-Y. Juang
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 306 KB
english, 1987
18

Structural studies of GaAs-AlAs superlattices grown by MBE

P.F. Fewster, J.P. Gowers, D. Hilton, C.T. Foxon
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 57 KB
english, 1987
21

Acceptor Raman scattering in GaAs-AlxGa1−xAs quantum-well structures

D. Gammon, R. Merlin, D. Huang, H. Morkoç
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 339 KB
english, 1987
24

Low temperature MBE growth of high quality AlGaAs

Y. Shiraki, T. Mishima, M. Morioka
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 454 KB
english, 1987
26

The use of antimony for the passivation of MBE grown GaAs surfaces

T.M. Kerr, D.C. Peacock, S.J. Holmes, C.E.C. Wood
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 141 KB
english, 1987
27

Optical measurement of Ga beam flux for MBE

J.A. McClintock, R.A. Wilson
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 282 KB
english, 1987
30

Polar-on-nonpolar epitaxy

Herbert Kroemer
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 1.23 MB
english, 1987
32

Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surface

Zhou Junming, Huang Yi, Li Yongkang, Jia Wei Yi
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 260 KB
english, 1987
33

Rheed studies and interface analysis of GaAs grown on Si(001)

K. Woodbridge, J.P. Gowers, P.F. Fewster, J.H. Neave, B.A. Joyce
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 185 KB
english, 1987
34

High mobility GaAs/AlAs/(211)Si structures grown by MBE

A. Christou, K. Varmazis, Z. Hatzopoulos
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 430 KB
english, 1987
35

Epitaxial growth of InP on Si using MIBE technique

S. Shimizu, S. Komiya
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 147 KB
english, 1987
36

Auger electron spectroscopy study of GaAs layer growth on InP substrate

Y. Matsui, H. Hayashi, K. Yoshida
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 502 KB
english, 1987
37

Doping of GaAs in metalorganic MBE using gaseous sources

H. Heinecke, K. Werner, M. Weyers, H. Lüth, P. Balk
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 476 KB
english, 1987
38

Defects in GaAs films grown by MOMBE

K. Werner, H. Heinecke, M. Weyers, H. Lüth, P. Balk
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 831 KB
english, 1987
40

MBE growth of Ga-Al-In-As ternary and quaternary alloy compositions

E.G. Scott, D.A. Andrews, G.J. Davies
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 163 KB
english, 1987
41

Spectroscopic studies of shallow defects in MBE GaSb

D.J. Nicholas, M. Lee, B. Hamilton, K.E. Singer
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 501 KB
english, 1987
42

Delta- (°-) doping in MBE-grown GaAs: Concept and device application

Klaus Ploog
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 858 KB
english, 1987
45

Incorporation and desorption of sulphur In InP grown by MBE

V.M. Airaksinen, T.S. Cheng, C.R. Stanley
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 497 KB
english, 1987
46

Molecular beam epitaxy of InP using low-energy P + ion beam

S. Maruno, Y. Morishita, T. Isu, Y. Nomura, H. Ogata
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 471 KB
english, 1987
50

Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes

D.L. Miller, P.M. Asbeck
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 367 KB
english, 1987
56

Silicon molecular beam epitaxy: 1984–1986

John C. Bean
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 1.01 MB
english, 1987
58

Electrical measurements on MBE grown Si/Si1−xGex heterojunctions

M.W. Denhoff, J.-M. Baribeau, D.C. Houghton, K. Rajan
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 621 KB
english, 1987
59

High quality heteroepitaxial Ge growth on (100) Si by MBE

Yukio Fukuda, Yoshitaka Kohama
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 877 KB
english, 1987
60

Monolithic integration using differential Si-MBE

E. Kasper, H.J. Herzog, K. Wörner
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 481 KB
english, 1987
62

NiSi2 layers grown on Si (111) by MBE and SPE

H. Von Känel, T. Graf, J. Henz, M. Ospelt, P. Wachter
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 482 KB
english, 1987
63

Developments and trends in MBE of II–VI Hg-based compounds

Jean-Pierre Faurie
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 583 KB
english, 1987
68

Growth and interdiffusion in CdTe/InSb multilayers

M. Kimata, A. Ryoji, T. Aoki
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 273 KB
english, 1987
69

Effects of beam pressure ratios on film quality in MBE growth of ZnSe

H. Cheng, S.K. Mohapatra, J.E. Potts, T.L. Smith
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 543 KB
english, 1987
71

MBE growth of single crystal α-Fe films on ZnSe (001) and (110)

B.T. Jonker, J.J. Krebs, G.A. Prinz, S.B. Qadri
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 468 KB
english, 1987
75

Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAs

F. Briones, D. Golmayo, L. González, A. Ruiz
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 467 KB
english, 1987
76

On the practical applications of MBE surface phase diagrams

S.M. Newstead, R.A.A. Kubiak, E.H.C. Parker
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 510 KB
english, 1987
79

In situ spectroscopic ellipsometry of mercury cadmium telluride MBE layers

Y. Demay, J.P. Gailliard, P. Medina
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 281 KB
english, 1987
84

The growth of GaAs on Si by MBE

S.M. Koch, S.J. Rosner, R. Hull, G.W. Yoffe, J.S. Harris Jr.
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 1.07 MB
english, 1987
86

Lattice relaxation of InAs heteroepitaxy on GaAs

H. Munekata, L.L. Chang, S.C. Woronick, Y.H. Kao
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 463 KB
english, 1987
88

Silicon doping from disilane in gas source MBE of GaAs

K. Kimura, S. Horiguchi, K. Kamon, M. Shimazu, M. Mashita, M. Mihara, M. Ishii
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 452 KB
english, 1987
89

Electrical properties of indium doped GaAs layers grown by MBE

M. Missous, K.E. Singer, D.J. Nicholas
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 387 KB
english, 1987
91

MBE of Pb1−xEuxSe for the use in IR devices

P. Norton, M. Tacke
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 508 KB
english, 1987
93

Leed studies of Si molecular beam epitaxy onto Si(111)

M. Horn, M. Henzler
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 466 KB
english, 1987
95

High quality NiSi2/Si epitaxial films grown by MBE

Y. Shiraki, T. Ohshima, A. Ishizaka, K. Nakagawa
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 763 KB
english, 1987
100

MBE growth of BaF2/(Ga, In)(As, Sb) structures

W.S. Truscott, Y.F. Wen, M.E. Lee
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 433 KB
english, 1987
101

Epitaxial growth of niobium thin films

J.H. Claassen, S.A. Wolf, S.B. Qadri, L.D. Jones
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 382 KB
english, 1987
103

Author index

Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 617 KB
english, 1987
104

Subject index

Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 185 KB
english, 1987
105

Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

W.T. Tsang
Journal:
Journal of Crystal Growth
Year:
1987
Language:
english
File:
PDF, 739 KB
english, 1987