Volume 20; Issue 12

Journal of Electronic Materials

Volume 20; Issue 12

1

Ferric ion leaching of chalcopyrites from different localities

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 749 KB

english, 1991

2

Thermodynamics of copper matte converting: Part III. Steady-state volatilization of Au, Ag, Pb, Zn, Ni, Se, Te, Bi, Sb, and As from slag, matte, and metallic copper

M. Nagamori, P. C. Chaubal

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 948 KB

english, 1991

3

Limestone calcination in a rotary kiln

A. P. Watkinson, J. K. Brimacombe

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 743 KB

english, 1991

4

Extension of the associated solution model to ternary metal-sulfur melts: Cu-Ni-S

Ying-Yu Chuang, Y. Austin Chang

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

5

Oxygen pressure measurements of silica saturated Fe-O-SiO2melts by the EMF method using zirconia solid electrolyte

Toshio Oishi, Tetsuya Goto, Yoshiro Kayahara, Katsutoshi Ono, Joichiro Moriyama

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 342 KB

english, 1991

6

Protection of InP EPI-ready wafers by controlled oxide growth

D. Gallet, M. Gendry, G. Hollinger, A. Overs, G. Jacob, B. Boudart, M. Gauneau, H. L’Haridon, D. Lecrosnier

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 271 KB

english, 1991

7

MLEK crystal growth of (100) indium phosphide

David F. Bliss, Robert M. Hilton, Stephen Bachowski, Joseph A. Adamski

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 407 KB

english, 1991

8

Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

J. H. Marsh, S. A. Bradshaw, A. C. Bryce, R. Gwilliam, R. W. Glew

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 628 KB

english, 1991

9

The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

M. E. Sherwin, D. T. Nichols, G. O. Munns, P. K. Bhattacharya, G. I. Haddad

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 379 KB

english, 1991

10

Systematic optical and x-ray study of InxGa1−xAs on InP

J. P. Estrera, W. M. Duncan, Y. C. Kao, H. Y. Liu, E. A. Beam

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

11

MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers

W. Passenberg, H. G. Bach, J. Böttcher

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 260 KB

english, 1991

12

Long wavelength quantum well lasers: Synopsis of the RACE “AQUA” project: MOVPE/MBE/GSMBE for InGaAsP/InP and InGaAlAs/InP high speed MQW DFB lasers

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 546 KB

english, 1991

13

Characteristics of Au/n-InP Schottky junctions formed on H2- and PH3-plasma treated surfaces

Takashi Sugino, Hiroyuki Yamamoto, Takashi Yamada, Hideaki Ninomiya, Yoshifumi Sakamoto, Koichiro Matsuda, Junji Shirafuji

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 528 KB

english, 1991

14

Development of high quality InP bulk crystals

O. Oda, K. Kainosho, K. Kohiro, R. Hirano, H. Shimakura, T. Inoue, H. Yamamoto, T. Fukui

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

15

Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

K. Kohiro, K. Kainosho, O. Oda

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 415 KB

english, 1991

16

High-efficiency, thin-film InP concentrator solar cells

M. W. Wanlass, T. J. Coutts, J. S. Ward, K. A. Emery, G. S. Horner

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

17

Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching

S. Lourdudoss, S. Nilsson, L. Bäckbom, T. Klinga, O. Kjebon, B. Holmberg

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 250 KB

english, 1991

18

Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology

P. J. O’sullivan, D. A. Allan, J. Herniman, N. Coyle, R. Young

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 304 KB

english, 1991

19

Selective growth of InP in the low pressure hydride VPE system

R. Beccard, A. Dehe, K. Heime, G. Laube, P. Speier

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 339 KB

english, 1991

20

Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures

E. Veuhoff, H. Baumeister, J. Rieger, M. Gorgel, R. Treichler

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 403 KB

english, 1991

21

Influence of iron content on electrical characteristics and thermal stability of LEC indium phosphide

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 527 KB

english, 1991

22

Ultra-thin GaxIn1−xAs/InP (0≤x≤0.47) layer growth by chemical beam epitaxy

Noriyuki Yokouchi, Toshi K. Uchida, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 367 KB

english, 1991

23

Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics

M. A. Tischler, B. D. Parker, P. M. Mooney, M. S. Goorsky

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 489 KB

english, 1991

24

A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ion beam sputtering

G. Stareev, A. Umbach

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 343 KB

english, 1991

25

Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control

G. Hirt, D. Hofmann, F. Mosel, N. Schäfer, G. Müller

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 370 KB

english, 1991

26

Ohmic contacts to InP-based materials induced by means of rapid thermal low pressure (metallorganic) chemical vapor deposition technique

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 506 KB

english, 1991

27

Orthorhombic distortion of mismatched InXGa1−XAs/InP heterostructures

Brian R. Bennett, Jesús A. Del Alamo

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 466 KB

english, 1991

28

Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

Munecazu Tacano, Yoshinobu Sugiyama, Yukihiro Takeuchi, Yoshiki Ueno

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

29

High purity InP grown by chemical beam epitaxy

A. Rudra, J. F. Carlin, L. Pavesi, F. Piazza, M. Proctor, M. Ilegems

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 329 KB

english, 1991

30

Optical and electrical characterization ofn- andp-type Fe-doped InP

F. Mosel, A. Seidl, D. Hofmann, G. Müller

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 330 KB

english, 1991

31

Lattice dilation acrossn-InP-substrates and its influence on material properties of InP/InGaAsP- double-heterostructures

A. Knauer, R. Staske, J. Kräusslich, R. Kittner

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 266 KB

english, 1991

32

In situ optical monitoring of OMVPE deposition of AlGaAs by laser reflectance

H. Sankur, W. Southwell, R. Hall

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 497 KB

english, 1991

33

Low-temperature CVD TiN as a diffusion barrier between gold and silicon

Joshua N. Musher, Roy G. Gordon

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 264 KB

english, 1991

34

Growth and characterization of indium arsenide thin films

D. L. Partin, L. Green, D. T. Morelli, J. Heremans, B. K. Fuller, C. M. Thrush

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 622 KB

english, 1991

35

Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

R. P. Schneider, B. W. Wessels

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 692 KB

english, 1991

36

The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang, M. G. Craford, V. M. Robbins

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 494 KB

english, 1991

37

An investigation of fluidized bed electrowinning of cobalt using 50 and 1000 Amp cells

M. Dubrovsky, J. W. Evans

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 754 KB

english, 1991

38

Oxidation of Fe (II) in sulfuric acid solutions with dissolved molecular oxygen

Masao Iwai, Hiroshi Majima, Yasuhiro Awakura

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 685 KB

english, 1991

39

Thermodynamics of copper matte converting: Part IV.A prioripredictions of the behavior of Au, Ag, Pb, Zn, Ni, Se, Te, Bi, Sb, and As in the Noranda Process reactor

M. Nagamori, P. C. Chaubal

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 678 KB

english, 1991

40

Volatilization of bismuth in copper matte converting — computer simulation

P. C. Chaubal, M. Nagamori

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 954 KB

english, 1991

41

Kinetics of chlorination of Co and Co-10 at. pct Pt alloy by reaction with HCl gas

Y. S. Kim, H. W. Pickering

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 752 KB

english, 1991

42

Prediction of the effects of surface-active elements on gas-liquid metal kinetics

C. H. Hua, N. A. D. Parlee

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 1.02 MB

english, 1991

43

Oxidation of alkaline earth sulfides to sulfates: Thermodynamic aspects

K. T. Jacob, G. N. K. Iyengar

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 339 KB

english, 1991

44

Thermochemistry of alloys of transition metals: Part III. Copper-silver, -titanium, -zirconium, and -hafnium at 1373 K

O. J. Kleppa, Shunroku Watanabe

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 870 KB

english, 1991

45

Rate of decarburization of iron-carbon melts: Part I. Experimental determination of the effect of sulfur

H. G. Lee, Y. K. Rao

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 698 KB

english, 1991

46

Rate of decarburization of iron-carbon melts: Part II. A mixed-control model

H. G. Lee, Y. K. Rao

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 935 KB

english, 1991

47

The coordination cluster theory—description of the activity coefficients of dilute solutions of oxygen and sulfur in binary alloys

Marie-Louise Saboungi, Pierre Cerisier, Milton Blander

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 857 KB

english, 1991

48

Dissolution of solid copper cylinder in molten tin-lead alloys under dynamic conditions

Yoshifusa Shoji, Sosuke Uchida, Tadashi Ariga

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 602 KB

english, 1991

49

Chemical and kinetic factors related to hydrogen removal from aluminum

G. K. Sigworth, T. A. Engh

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 1.21 MB

english, 1991

50

Activities of CoS and FeS in copper mattes and the behavior of cobalt in copper smelting

S. N. Sinha, M. Nagamori

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 879 KB

english, 1991

51

The use of heat flow modeling to explore solidification phenomena

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 701 KB

english, 1991

52

Pulsed laser treatment of plasma sprayed coatings

S. Dallaire, P. Cielo

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 376 KB

english, 1991

53

Preparation and properties of Al-alloy coconut shell char particulate composites

T. P. Murali, M. K. Surappa, P. K. Rohatgi

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 951 KB

english, 1991

54

The effect of mold precession on channel and macro-segregation in ammonium chloride-water analog castings

Alex Sample, Angus Hellawell

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 674 KB

english, 1991

55

Effect of wave motion on chill cast surfaces

D. K. Stemple, E. N. Zulueta, M. C. Flemings

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 611 KB

english, 1991

56

Heteronuclear compounds of arsenic and antimony

James E. Mauser

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 296 KB

english, 1991

57

The reaction of coke specimens in an environment where both the temperature and the gas composition are time dependent

D. A. Aderibigbe, J. Szekely

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 275 KB

english, 1991

58

Dry method preparation and melting point of Cu2So4

N. Jacinto, M. Nagamori, H. Y. Sohn

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 289 KB

english, 1991

59

Changes in diffusivity due to sintering in metallized iron oxide pellets

J. K. Wright, A. L. Morrison

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 217 KB

english, 1991

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