Volume 29; Issue 1

Journal of Electronic Materials

Volume 29; Issue 1

1

Foreword

Robert M. Biefeld, Christine A. Wang

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 44 KB

english, 2000

2

Model development of GaN MOVPE growth chemistry for reactor design

Jingxi Sun, J. M. Redwing, T. F. Kuech

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 168 KB

english, 2000

3

InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, N. P. Kobayashi

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 356 KB

english, 2000

4

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

G. Parish, S. Keller, S. P. Denbaars, U. K. Mishra

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 299 KB

english, 2000

5

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

A. E. Wickenden, D. D. Koleske, R. L. Henry, R. J. Gorman, M. E. Twigg, M. Fatemi, J. A. Freitas, W. J. Moore

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 181 KB

english, 2000

6

The hall mobility and its relationship with persistent photoconductivity of undoped GaN

W. Wang, S. J. Chua, G. Li

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 181 KB

english, 2000

7

Characterization of undoped and silicon-doped InGaN/GaN single quantum wells

B. Schineller, P. H. Lim, G. P. Yablonskii, E. V. Lutsenko, O. Schön, H. Protzmann, M. Heuken, K. Heime

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 172 KB

english, 2000

8

Migration effect on semiconductor surface for narrow-stripe selective MOVPE

Y. Sakata, K. Komatsu

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 239 KB

english, 2000

9

MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications

F. Dimroth, P. Lanyi, U. Schubert, A. W. Bett

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 212 KB

english, 2000

10

High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices

F. Dimroth, U. Schubert, F. Schienle, A. W. Bett

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

11

Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

A. Knauer, F. Bugge, G. Erbert, H. Wenzel, K. Vogel, U. Zeimer, M. Weyers

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 182 KB

english, 2000

12

MOVPE growth of AlGaAs/GaInP diode lasers

F. Bugge, A. Knauer, S. Gramlich, I. Rechenberg, G. Beister, J. Sebastian, H. Wenzel, G. Erbert, M. Weyers

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 136 KB

english, 2000

13

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

Wilson De Carvalho, Mario Tosi Furtado, Aryton André Bernussi, Angelo Luiz Gobbi, Mônica Alonso Cotta

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 185 KB

english, 2000

14

Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

Y. Liu, C. R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, M. Wraback

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 193 KB

english, 2000

15

Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

Q. Yang, D. Scott, T. Chung, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 196 KB

english, 2000

16

(Al)GaInP multiquantum well LEDs on GaAs and Ge

P. Modak, M. D’Hondt, P. Mijlemans, I. Moerman, P. van Daele, P. Demeester

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 221 KB

english, 2000

17

A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures

G. M. Peake, L. Zhang, N. Y. Li, A. M. Sarangan, C. G. Willison, R. J. Shul, S. D. Hersee

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 304 KB

english, 2000

18

Exploring new active regions for type I InAsSb strained-layer lasers

R. M. Biefeld, J. D. Phillips, S. R. Kurtz

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 124 KB

english, 2000

19

MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

K. Haberland, A. Bhattacharya, M. Zorn, M. Weyers, J. -T. Zettler, W. Richter

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 185 KB

english, 2000

20

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

D. A. Allwood, P. C. Klipstein, N. J. Mason, R. J. Nicholas, P. J. Walker

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 248 KB

english, 2000

21

Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

K. A. Bell, M. Ebert, S. D. Yoo, K. Flock, D. E. Aspnes

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 212 KB

english, 2000

22

Step structure of GaInAsSb grown by organometallic vapor phase epitaxy

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 192 KB

english, 2000

23

Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

W. Reichert, R. M. Cohen

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 664 KB

english, 2000

24

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Georg Bernatz, Siegfried Nau, Rasmus Rettig, Wolfgang Stolz

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 378 KB

english, 2000

25

Surfactant effects of dopants on ordering in GaInP

G. B. Stringfellow, R. T. Lee, C. M. Fetzer, J. K. Shurtleff, Yu Hsu, S. W. Jun, S. Lee, T. Y. Seong

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 266 KB

english, 2000

26

Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

Junichi Motohisa, Chiharu Tazaki, Tomoki Irisawa, Masashi Akabori, Takashi Fukui

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 202 KB

english, 2000

27

A comparison of TMG with TEG for the growth of InxGa1−xAs

Richard William Glew, Karen Grim-Bogdan, Nikolaos Tzafaras, Shohei Nakahara

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 176 KB

english, 2000

28

Next generation adduct purification techniques for low oxygen content metal alkyls

K. M. Coward, A. C. Jones, M. E. Pemble, S. A. Rushworth, L. M. Smith, T. Martin

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 156 KB

english, 2000

29

Properties of solution TMI as an OMVPE source

M. S. Ravetz, L. M. Smith, S. A. Rushworth, A. B. Leese, R. Kanjolia, J. I. Davies, R. T. Blunt

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 178 KB

english, 2000

30

1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques

R. Odedra, L. M. Smith, S. A. Rushworth, M. S. Ravetz, J. Clegg, R. Kanjolia, S. J. C. Irvine, M. U. Ahmed, E. D. Bourret-Courchesne, N. Y. Li, J. Cheng

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 164 KB

english, 2000

31

Optical characterization of (GaIn)(NAs)/GaAs MQW structures

J. Koch, F. Höhnsdorf, W. Stolz

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 132 KB

english, 2000

32

In-situ post annealing treatment of nitrogen-doped ZnSe grown using photo-assisted MOVPE

M. U. Ahmed, S. J. C. Irvine

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 139 KB

english, 2000

33

Growth and photoluminescence study of ZnSe quantum dots

Y. H. Chang, M. H. Chieng, C. C. Tsai, M. C. Harris Liao, Y. F. Chen

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

34

Thermoelectric quantum-dot superlattices with high ZT

T. C. Harman, P. J. Taylor, D. L. Spears, M. P. Walsh

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 181 KB

english, 2000

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