Volume 45; Issue 9

Journal of Electronic Materials

Volume 45; Issue 9

1

Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory

Emeline Lesmanne,Roch Espiau de Lamaestre…

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 525 KB

english, 2016

2

Surface Leakage Mechanisms in III–V Infrared Barrier Detectors

Sidor, D. E., Savich, G. R., Wicks, G. W.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 869 KB

english, 2016

3

Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors

Vallone, Marco, Goano, Michele, Bertazzi, Francesco, Ghione, Giovanni, Schirmacher, Wilhelm, Hanna, Stefan, Figgemeier, Heinrich

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.55 MB

english, 2016

4

HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

Gravrand, O., Rothman, J., Cervera, C., Baier, N., Lobre, C., Zanatta, J. P., Boulade, O., Moreau, V., Fieque, B.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.33 MB

english, 2016

5

Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

Song, P. Y., Ye, Z. H., Huang, A. B., Chen, H. L., Hu, X. N., Ding, R. J., He, L.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 991 KB

english, 2016

6

High-Operating Temperature HgCdTe: A Vision for the Near Future

Lee, D., Carmody, M., Piquette, E., Dreiske, P., Chen, A., Yulius, A., Edwall, D., Bhargava, S., Zandian, M., Tennant, W. E.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.58 MB

english, 2016

7

Confirmation of Auger-1 Minority-Carrier Lifetimes in Hg0.77Cd0.23Te and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays

Destefanis, V., Kerlain, A.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 624 KB

english, 2016

8

Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays

Mouzali, S., Lefebvre, S., Rommeluère, S., Ferrec, Y., Primot, J.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.60 MB

english, 2016

9

High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

Ting, David Z., Soibel, Alexander, Höglund, Linda, Hill, Cory J., Keo, Sam A., Fisher, Anita, Gunapala, Sarath D.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

10

Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

Gu, R., Lei, W., Antoszewski, J., Faraone, L.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1018 KB

english, 2016

11

Analysis of III–V SuperlatticenBnDevice Characteristics

Rhiger, David R., Smith, Edward P., Kolasa, Borys P., Kim, Jin K., Klem, John F., Hawkins, Samuel D.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

12

A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current

Pinkie, Benjamin, Bellotti, Enrico

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.14 MB

english, 2016

13

Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices

Krishnamurthy, Srini, Van Orden, Derek, Yu, Zhi-Gang

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 407 KB

english, 2016

14

Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

Kerlain, A., Brunner, A., Sam-Giao, D., Pére-Laperne, N., Rubaldo, L., Destefanis, V., Rochette, F., Cervera, C.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

15

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

Fourreau, Y., Pantzas, K., Patriarche, G., Destefanis, V.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.90 MB

english, 2016

16

MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

Hanna, S., Eich, D., Mahlein, K.-M., Fick, W., Schirmacher, W., Thöt, R., Wendler, J., Figgemeier, H.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 4.38 MB

english, 2016

17

High-Quality AgGaTe2Layers on Si Substrates with Ag2Te Buffer Layers

Uruno, Aya, Kobayashi, Masakazu

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

18

Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

Schuster, J., DeWames, R. E., DeCuir, E. A., Bellotti, E., Dhar, N., Wijewarnasuriya, P. S.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

19

Passivation Effect of Atomic Layer Deposition of Al2O3Film on HgCdTe Infrared Detectors

Zhang, Peng, Ye, Zhen-Hua, Sun, Chang-Hong, Chen, Yi-Yu, Zhang, Tian-Ning, Chen, Xin, Lin, Chun, Ding, Ring-Jun, He, Li

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.22 MB

english, 2016

20

Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

Qiao, H., Hu, W. D., Li, T., Li, X. Y., Chang, Y.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 638 KB

english, 2016

21

Hole Transport in Arsenic-Doped Hg1−xCdxTe withx≥ 0.5

Umana-Membreno, G. A., Kala, H., Bains, S., Akhavan, N. D., Antoszewski, J., Maxey, C. D., Faraone, L.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 838 KB

english, 2016

22

Dry etched SiO2Mask for HgCdTe Etching Process

Chen, Y. Y., Ye, Z. H., Sun, C. H., Deng, L. G., Zhang, S., Xing, W., Hu, X. N., Ding, R. J., He, L.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 968 KB

english, 2016

23

CdTe Photovoltaics for Sustainable Electricity Generation

Munshi, Amit, Sampath, Walajabad

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.28 MB

english, 2016

24

Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

Simingalam, Sina, Pattison, James, Chen, Yuanping, Wijewarnasuriya, Priyalal, Rao, Mulpuri V.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

25

Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

Apte, Palash, Rybnicek, Kimon, Stoltz, Andrew

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 787 KB

english, 2016

26

Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

He, J. L., Hu, W. D., Ye, Z. H., Lv, Y. Q., Chen, X. S., Lu, W.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 712 KB

english, 2016

27

Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

Perera, A. G. U., Lao, Y. F., Wijewarnasuriya, P. S., Krishna, S. S.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.49 MB

english, 2016

28

Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1−xSbxand Hg1−xCdxTe

De Wames, Roger E.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.23 MB

english, 2016

29

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Kopytko, M., Jóźwikowski, K., Martyniuk, P., Gawron, W., Madejczyk, P., Kowalewski, A., Markowska, O., Rogalski, A., Rutkowski, J.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 3.93 MB

english, 2016

30

Analysis of Etched CdZnTe Substrates

Benson, J. D., Bubulac, L. O., Jaime-Vasquez, M., Lennon, C. M., Arias, J. M., Smith, P. J., Jacobs, R. N., Markunas, J. K., Almeida, L. A., Stoltz, A., Wijewarnasuriya, P. S., Peterson, J., Reddy, M.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.91 MB

english, 2016

31

Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures

Kujofsa, Tedi, Ayers, J. E.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.41 MB

english, 2016

32

Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

Park, J. H., Pepping, J., Mukhortova, A., Ketharanathan, S., Kodama, R., Zhao, J., Hansel, D., Velicu, S., Aqariden, F.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 4.35 MB

english, 2016

33

Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

Sun, Quanzhi, Wei, Yanfeng, Zhang, Juan, Sun, Ruiyun

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.17 MB

english, 2016

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