Volume 31; Issue 3

Main
Journal of Semiconductors
Volume 31; Issue 3

Journal of Semiconductors

Volume 31; Issue 3

1

Fluid model of inductively coupled plasma etcher based on COMSOL

Jia, Cheng, Linhong, Ji, Yu, Zhu, Yixiang, Shi

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.74 MB

english, 2010

2

Synthesis and optical properties of nanostructured Ce(OH) 4

Ansari, A A, Kaushik, A

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.53 MB

english, 2010

3

Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films

Rongyan, Chuai, Bin, Liu, Xiaowei, Liu, Xianlong, Sun, Changzhi, Shi, Lijian, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 700 KB

english, 2010

4

White light photoluminescence from ZnS films on porous Si substrates

Caifeng, Wang, Qingshan, Li, Bo, Hu, Weibing, Li

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 240 KB

english, 2010

5

First-principle study on anatase TiO 2 codoped with nitrogen and ytterbium

Pan, Gao, Xuejun, Zhang, Wenfang, Zhou, Jing, Wu, Qingju, Liu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.26 MB

english, 2010

6

Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors

Hui, Qiao, Weida, Hu, Zhenhua, Ye, Xiangyang, Li, Haimei, Gong

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

7

Wet etching characteristics of a HfSiON high- k dielectric in HF-based solutions

Yongliang, Li, Qiuxia, Xu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.01 MB

english, 2010

8

Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

Chenglong, Wu, Jianhong, Yang, Xueyuan, Cai, Xiaofeng, Shan

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 649 KB

english, 2010

9

High contrast ratio, high uniformity multiple quantum well spatial light modulators

Yuyang, Huang, Liu, H C, Wasilewski, Z R, Buchanan, M, Laframboise, S R, Chen, Yang, Guoxin, Cui, Lifeng, Bian, Hui, Yang, Yaohui, Zhang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 159 KB

english, 2010

10

A 4 GHz quadrature output fractional- N frequency synthesizer for an IR-UWB transceiver

Shita, Guo, Lu, Huang, Haiquan, Yuan, Lisong, Feng, Zhiming, Liu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 628 KB

english, 2010

11

Light-current characteristics of vertical-cavity surface-emitting lasers with external optical feedback

Xing, Zhang, Yongqiang, Ning, Yanfang, Sun, Yan, Zhang, Guangyu, Liu, Hangyu, Peng, Zaijin, Li, Li, Qin, Yun, Liu, Lijun, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 507 KB

english, 2010

12

Characteristics of GaN grown on 6H-SiC with different AlN buffers

Guojian, Ding, Liwei, Guo, Zhigang, Xing, Yao, Chen, Peiqiang, Xu, Haiqiang, Jia, Junming, Zhou, Hong, Chen

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.82 MB

english, 2010

13

A new static induction thyristor with high forward blocking voltage and excellent switching performances

Caizhen, Zhang, Yongshun, Wang, Chunjuan, Liu, Zaixing, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 117 KB

english, 2010

14

Tapered quantum cascade lasers operating at 9.0 μm

Yu, Gao, Fengqi, Liu, Junqi, Liu, Lu, Li, Lijun, Wang, Zhanguo, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.46 MB

english, 2010

15

A 4 W K-band GaAs MMIC power amplifier with 22 dB gain

Zhengliang, Huang, Faxin, Yu, Yao, Zheng

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 190 KB

english, 2010

16

Grain boundary layer behavior in ZnO/Si heterostructure

Bingce, Liu, Cihui, Liu, Bo, Yi

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 156 KB

english, 2010

17

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Yuzhan, Zheng, Wu, Lu, Diyuan, Ren, Yiyuan, Wang, Zhikuan, Wang, Yonghui, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.15 MB

english, 2010

18

A low power 12-b 40-MS/s pipeline ADC

Xiumei, Yin, Qi, Wei, Lai, Xu, Huazhong, Yang

Journal:

Journal of Semiconductors

Year:

2010

File:

PDF, 601 KB

2010

19

GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

Zaijin, Li, Liming, Hu, Ye, Wang, Ye, Yang, Hangyu, Peng, Jinlong, Zhang, Li, Qin, Yun, Liu, Lijun, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 513 KB

english, 2010

20

A low power wide-band CMOS PLL frequency synthesizer for portable hybrid GNSS receiver

Shimao, Xiao, Yunfeng, Yu, Chengyan, Ma, Tianchun, Ye, Ming, Yin

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 112 KB

english, 2010

21

A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS

Changchun, Zhang, Zhigong, Wang, Si, Shi, Yufeng, Guo

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

22

A millimeter-wave monolithic doubly balanced diode mixer

Qin, Li, Zhigong, Wang, Leijun, Xu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.49 MB

english, 2010

23

A wideband frequency synthesizer for a receiver application at multiple frequencies

Xiaosong, Wang, Shuilong, Huang, Pufeng, Chen, Mumin, Lei, Zhiqiang, Li, Haiying, Zhang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.35 MB

english, 2010

24

High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing

Dongfang, Wang, Ke, Wei, Tingting, Yuan, Xinyu, Liu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.00 MB

english, 2010

25

Insulated gate bipolar transistor with trench gate structure of accumulation channel

Mengliang, Qian, Zehong, Li, Bo, Zhang, Zhaoji, Li

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 553 KB

english, 2010